Phosphorus Doped Monocrystalline Silicon Ingot

We use the Czochralski (CZ) method to grow both p-type and n-type dislocation-free silicon ingots with <100>, <111> or <110> orientation. The diameters of the ingots are 100mm, 125mm, 150mm, 200mm, 300mm and 400mm. The dopant types used, and the matching resistivity ranges for each dopant are listed in the product tables. For the p-type boron doped ingots, the lowest resistivity that can be obtained for an ingot is 0.0006 ohm.cm. For an n-type ingot, the lowest resistivity that can be obtained by doping with red-phosphorus is 0.0011 ohm.cm. To ensure high gettering ability and mechanical strength, the oxygen contents of the ingots are regulated. We also pay special attention to improve radial uniformity and to minimize the as-grown defects, such as COP, swirl and dislocation loops in an ingot.